? semiconductor components industries, llc, 2005 february, 2005 ? rev. 4 1 publication order number: bc856bdw1t1/d bc856bdw1t1, bc857bdw1t1 series, bc858cdw1t1 series preferred devices dual general purpose transistors pnp duals these transistors are designed for general purpose amplifier applications. they are housed in the sot?363/sc?88 which is designed for low power surface mount applications. ? device marking: bc856bdw1t1 = 3b bc857bdw1t1 = 3f BC857CDW1t1 = 3g bc858cdw1t1 = 3l maximum ratings rating symbol bc856 bc857 bc858 unit collector ?emitter voltage v ceo ?65 ?45 ?30 v collector ?base voltage v cbo ?80 ?50 ?30 v emitter ?base voltage v ebo ?5.0 ?5.0 ?5.0 v collector current ? continuous i c ?100 ?100 ?100 madc thermal characteristics characteristic symbol max unit total device dissipation per device fr?5 board (note 1) t a = 25 c derate above 25 c p d 380 250 3.0 mw mw/ c thermal resistance, junction to ambient r ja 328 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in device package shipping 2 ordering information bc857bdw1t1 sot?363 sot?363/sc?88 case 419b style 1 3000 units/reel device marking preferred devices are recommended choices for future use and best overall value. BC857CDW1t1 sot?363 3000 units/reel bc858cdw1t1 sot?363 3000 units/reel 3xm see table q 1 (1) (2) (3) (4) (5) (6) q 2 bc856bdw1t1 sot?363 3000 units/reel 3x = specific device code x = b, f, g, k, l m = date code http://onsemi.com 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 1 BC857CDW1t1g sot?363 (pb?free) 3000 units/reel bc857bdw1t1g sot?363 (pb?free) 3000 units/reel bc856bdw1t1g sot?363 (pb?free) 3000 units/reel
bc856bdw1t1, bc857bdw1t1 series, bc858cdw1t1 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 ma) bc856 series bc857 series bc858 series v (br)ceo ?65 ?45 ?30 ? ? ? ? ? ? v collector ?emitter breakdown voltage (i c = ?10 a, v eb = 0) bc856 series bc857b only bc858 series v (br)ces ?80 ?50 ?30 ? ? ? ? ? ? v collector ?base breakdown voltage (i c = ?10 a) bc856 series bc857 series bc858 series v (br)cbo ?80 ?50 ?30 ? ? ? ? ? ? v emitter ?base breakdown voltage (i e = ?1.0 a) bc856 series bc857 series bc858 series v (br)ebo ?5.0 ?5.0 ?5.0 ? ? ? ? ? ? v collector cutoff current (v cb = ?30 v) collector cutoff current (v cb = ?30 v, t a = 150 c) i cbo ? ? ? ? ?15 ?4.0 na a on characteristics dc current gain (i c = ?10 a, v ce = ?5.0 v) bc856b, bc857b bc857c, bc858c (i c = ?2.0 ma, v ce = ?5.0 v) bc856b, bc857b bc857c, bc858c h fe ? ? 220 420 150 270 290 520 ? ? 475 800 ? collector ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v ce(sat) ? ? ? ? ?0.3 ?0.65 v base ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v be(sat) ? ? ?0.7 ?0.9 ? ? v base ?emitter on voltage (i c = ?2.0 ma, v ce = ?5.0 v) (i c = ?10 ma, v ce = ?5.0 v) v be(on) ?0.6 ? ? ? ?0.75 ?0.82 v small?signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ?0.2 ma, v ce = ?5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db
bc856bdw1t1, bc857bdw1t1 series, bc858cdw1t1 series http://onsemi.com 3 typical characteristics ? bc856 figure 1. dc current gain i c , collector current (ma) figure 2. aono voltage i c , collector current (ma) -0.8 -1.0 -0.6 -0.2 -0.4 1.0 2.0 -0.1 -1.0 -10 -200 -0.2 0.2 0.5 -0.2 -1.0 -10 -200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = -5.0 v figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) q -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = -5.0 v t a = 25 c 0 -0.5 -2.0 -5.0 -20 -50 -100 -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c vb for v be -2.0 -5.0 -20 -50 -100 figure 5. capacitance v r , reverse voltage (volts) 40 figure 6. current?gain ? bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0 -50 ma -200 ma
bc856bdw1t1, bc857bdw1t1 series, bc858cdw1t1 series http://onsemi.com 4 typical characteristics ? bc857/bc858 figure 7. normalized dc current gain i c , collector current (madc) 2.0 figure 8. asaturationo and aono voltages i c , collector current (madc) -0.2 0.2 figure 9. collector saturation region i b , base current (ma) figure 10. base?emitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma figure 11. capacitances v r , reverse voltage (volts) 10 figure 12. current?gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c t a = 25 c 1.0
bc856bdw1t1, bc857bdw1t1 series, bc858cdw1t1 series http://onsemi.com 5 figure 13. thermal response figure 14. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable opera- tion. collector load lines for specific circuits must fall be- low the limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 13. at high case or ambient temperatures, thermal limitations will re- duce the power that can be handled to values less than the limitations imposed by the secondary breakdown. t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k d = 0.5 0.2 0.1 0.05 single pulse z ja (t) = r(t) r ja r ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 1.0m 0.02 0.01
bc856bdw1t1, bc857bdw1t1 series, bc858cdw1t1 series http://onsemi.com 6 package dimensions sc?88 (sot?363) case 419b?02 issue v style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 sc?88/sc70?6 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ?e? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 bc856bdw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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